• § 98.90 - Definition of the source category.

• § 98.91 - Reporting threshold.

• § 98.92 - GHGs to report.

• § 98.93 - Calculating GHG emissions.

• § 98.94 - Monitoring and QA/QC requirements.

• § 98.95 - Procedures for estimating missing data.

• § 98.96 - Data reporting requirements.

• § 98.97 - Records that must be retained.

• § 98.98 - Definitions.

• Appendix - Table I-1 to Subpart I of Part 98—Default Emission Factors for Threshold Applicability Determination

• Appendix - Table I-2 to Subpart I of Part 98—Examples of Fluorinated GHGs Used by the Electronics Industry

• Appendix - Table I-3 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 150 mm and 200 mm Wafer Sizes

• Appendix - Table I-4 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 300 mm and 450 mm Wafer Size

• Appendix - Table I-5 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for MEMS Manufacturing

• Appendix - Table I-6 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for LCD Manufacturing

• Appendix - Table I-7 To Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for PV Manufacturing

• Appendix - Table I-8 to Subpart I of Part 98— Default Emission Factors (1-UN2O,j) for N2O Utilization (UN2O,j)

• Appendix - Table I-9 to Subpart I of Part 98—Methods and Procedures for Conducting Emissions Test for Stack Systems

• Appendix - Table I-10 to Subpart I of Part 98—Maximum Field Detection Limits Applicable to Fluorinated GHG Concentration Measurements for Stack Systems

• Appendix - Table I-11 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for Use With the Stack Test Method (150 mm and 200 mm Wafers)

• Appendix - Table I-12 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for Use With the Stack Test Method (300 mm and 450 mm Wafers)

• Appendix - Table I-13 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for LCD Manufacturing for Use With the Stack Test Method

• Appendix - Table I-14 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for PV Manufacturing for Use With the Stack Test Method

• Appendix - Table I-15 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for MEMS Manufacturing for Use With the Stack Test Method

• Appendix - Table I-16 to Subpart I of Part 98—Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing

• Appendix - Table I-17 to Subpart I of Part 98—Expected and Possible By-Products for Electronics Manufacturing

• Appendix - Table I-18 to Subpart I of Part 98—XXX

• Appendix - Table I-19 to Subpart I of Part 98—XXX

• Appendix - Table I-20 to Subpart I of Part 98—XXX

• Appendix - Table I-21 to Subpart I of Part 98—XXX

• Appendix Appendix A - Appendix A to Subpart I of Part 98—Alternative Procedures for Measuring Point-of-Use Abatement Device Destruction or Removal Efficiency